@article{e0ad0131e109439e959ef70b342d2854,
title = "Threshold voltage control of electrolyte solution gate field-effect transistor by electrochemical oxidation",
abstract = "Diamond electrolyte solution-gate-field effect transistors (SGFETs) are suitable for applications as chemical ion sensors because of their wide potential window and good physical and chemical stabilities. In this study, we fabricated an anodically oxidized diamond SGFET from a full hydrogen-terminated diamond SGFET and demonstrated control of the device threshold voltage by irreversible anodic oxidation. The applied anodic bias voltage (VAO) was varied gradually from low to high (1.1-1.7 V). As the anodic oxidation proceeded, the threshold voltage shifted to more negative values with no degradation of hole mobility. Thus, anodic oxidation is a useful method for controlling the threshold voltage of diamond SGFETs.",
author = "Takuro Naramura and Masafumi Inaba and Sho Mizuno and Keisuke Igarashi and Eriko Kida and {Mohd Sukri}, {Shaili Falina} and Yukihiro Shintani and Hiroshi Kawarada",
note = "Funding Information: This study was supported by Japan Science and Technology Agency (Adaptable and Seamless Technology Transfer Program through Target-driven R&D) and a Grant-in-Aid for fundamental research S (26220903, JSPS) from the Japan Society for the Promotion of Science. We appreciate the Institute for Nanoscience and Nanotechnology in Waseda University for the use of their equipment Publisher Copyright: {\textcopyright} 2017 Author(s).",
year = "2017",
month = jul,
day = "3",
doi = "10.1063/1.4991364",
language = "English",
volume = "111",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "1",
}