TY - JOUR
T1 - Time-resolved electroluminescence study of green light-emitting diode
AU - Kuroda, T.
AU - Horio, N.
AU - Taniguchi, K.
AU - Sato, H.
AU - Funaoka, C.
AU - Tackeuchi, A.
PY - 2002/12/1
Y1 - 2002/12/1
N2 - We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications.
AB - We have performed time-resolved photoluminescence and electroluminescence measurements for an InGaN quantum well at 300 K to investigate the carrier dynamics. Electroluminescence measurement yields more direct information of the carrier dynamics of device operation, because carriers are generated by current injection in optoelectronic devices. The time evolution of EL spectra indicates that spatial indium fluctuations become significant with increasing In content in nitride-based optoelectronic applications.
UR - http://www.scopus.com/inward/record.url?scp=84875093504&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84875093504&partnerID=8YFLogxK
U2 - 10.1002/pssc.200390038
DO - 10.1002/pssc.200390038
M3 - Conference article
AN - SCOPUS:84875093504
SN - 1610-1634
SP - 25
EP - 28
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
IS - 1
T2 - 2nd International Workshop on Nitride Semiconductors, IWN 2002
Y2 - 22 July 2002 through 25 July 2002
ER -