TY - JOUR
T1 - Triode-type basic display structure using Si-doped AlN field emitters
AU - Taniyasu, Yashitaka
AU - Kasu, Makoto
AU - Makimoto, Toshiki
AU - Kobayashi, Naoki
PY - 2003/11/1
Y1 - 2003/11/1
N2 - We fabricated a basic triode-type field emission display (FED) structure by using heavily Si-doped AlN and demonstrated its action. The FED consisted of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. We used the grid voltage to control the emission current. This device exhibited an emission current of 2 μA for an electric field of 23 V/μm, and luminescence from the phosphor excited by the field-emitted electrons was observed. The brightness of the luminescence increased as the grid voltage was increased, and it was uniform over the entire field-emission area.
AB - We fabricated a basic triode-type field emission display (FED) structure by using heavily Si-doped AlN and demonstrated its action. The FED consisted of the heavily Si-doped AlN field emitter, mesh grid, and phosphor-coated anode screen. We used the grid voltage to control the emission current. This device exhibited an emission current of 2 μA for an electric field of 23 V/μm, and luminescence from the phosphor excited by the field-emitted electrons was observed. The brightness of the luminescence increased as the grid voltage was increased, and it was uniform over the entire field-emission area.
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U2 - 10.1002/pssa.200303302
DO - 10.1002/pssa.200303302
M3 - Article
AN - SCOPUS:0346885837
SN - 0031-8965
VL - 200
SP - 199
EP - 201
JO - Physica Status Solidi (A) Applied Research
JF - Physica Status Solidi (A) Applied Research
IS - 1
ER -