@inproceedings{c7a2f7d83dee4b4c9c895b6214d557ad,
title = "Ultra-high efficiency III-V on Si MOS capacitor Mach-Zehnder modulator",
abstract = "High-capacity optical transmitters with reduced size, cost, and power consumption are required to meet growing bandwidth requirements of network systems. A high-modulation-efficiency Mach-Zehnder modulator (MZM) on an Si platform is a key piece of equipment for these transmitters. Si-MZMs have been widely reported; however their performance is limited by the material properties of Si. To overcome the performance limitations of Si MZMs, we have integrated III-V materials on Si substrate and developed a heterogeneously integrated III-V/Si metal oxide semiconductor (MOS) capacitor phase shifter for constructing ultra-high efficient MZM, in which the n-InGaAsP, p-Si, and SiO2 film are used for constructing the MOS capacitor. The fabricated MZM with the MOS capacitor exhibited a VπL of 0.09 Vcm and insertion loss of ∼2 dB. 32-Gbps modulation of the MZM was also demonstrated.",
keywords = "Mach-Zehnder modulator, Si photonics",
author = "T. Aihara and T. Hiraki and K. Hasebe and T. Fujii and K. Takeda and T. Tsuchizawa and Takaaki Kakitsuka and H. Fukuda and S. Matsuo",
year = "2018",
month = jan,
day = "1",
doi = "10.1117/12.2503433",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Zhiping Zhou and Kazumi Wada",
booktitle = "Nanophotonics and Micro/Nano Optics IV",
note = "Nanophotonics and Micro/Nano Optics IV 2018 ; Conference date: 12-10-2018 Through 13-10-2018",
}