@article{68f7e8e113e042a1bfcda242c7791760,
title = "Ultra-Low Voltage and Ultra-Low Power Consumption Nonvolatile Operation of a Three-Terminal Atomic Switch",
abstract = "Nonvolatile three-terminal operation, with a very small range of bias sweeping (-80 to 250 mV), a high on/off ratio of up to six orders of magnitude, and a very small gate leakage current (<1 pA), is demonstrated using an Ag (gate)/Ta2O5 (ionic transfer layer)/Pt (source), Pt (drain) three-terminal atomic switch structure.",
keywords = "ReRAM, atomic switches, low voltage, redox, three terminal",
author = "Qi Wang and Yaomi Itoh and Tohru Tsuruoka and Masakazu Aono and Tsuyoshi Hasegawa",
note = "Publisher Copyright: {\textcopyright} 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim.",
year = "2015",
month = oct,
day = "1",
doi = "10.1002/adma.201502678",
language = "English",
volume = "27",
pages = "6029--6033",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "39",
}