@inproceedings{daf599ad821c4e0d9dc49cb654dc1673,
title = "Ultrahigh efficiency III-V on Si MOS capacitor optical modulator",
abstract = "A high-efficiency and low-loss Mach-Zehnder modulator on a Si platform is a key component for meeting the demand for high-capacity, low-cost and low-power optical transceivers in future optical fiber links. We report a III-V/Si MOS capacitor Mach-Zehnder modulator with an ultrahigh-efficiency phase shifter, which consists of n-type InGaAsP and ptype Si. The main advantage of this structure is a large electron-induced refractive index change and low free-carrier absorption loss of the n-type InGaAsP. The heterogeneously integrated InGaAsP/Si MOS capacitor structure is fabricated by using the oxygen plasma assisted bonding method. The fabricated device shows VπL of 0.09 Vcm, a value over three-times smaller than that of the conventional Si MOS capacitor Mach-Zehnder modulator, without an increase in the insertion loss. This clearly indicates that the proposed III-V/Si MOS capacitor Mach-Zehnder modulator overcomes the performance limit of the Si Mach-Zehnder modulator.",
keywords = "Mach-Zehnder modulator, Si photonics",
author = "T. Hiraki and T. Aihara and K. Hasebe and T. Fujii and K. Takeda and T. Tsuchizawa and T. Kakitsuka and H. Fukuda and S. Matsuo",
note = "Publisher Copyright: {\textcopyright} 2018 SPIE.; Silicon Photonics: From Fundamental Research to Manufacturing 2018 ; Conference date: 23-04-2018 Through 26-04-2018",
year = "2018",
doi = "10.1117/12.2312315",
language = "English",
isbn = "9781510618985",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Laurent Vivien and Peter O'Brien and Baets, {Roel G.}",
booktitle = "Silicon Photonics",
}