Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

Akio Shima; Hiroshi Ashihara; Atsushi Hiraiwa; Toshiyuki Mine; Yasushi Goto

doi:10.1109/TED.2005.848081

Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

Akio Shima^*, Hiroshi Ashihara, Atsushi Hiraiwa, Toshiyuki Mine, Yasushi Goto

^*この研究の対応する著者

研究成果: Article › 査読

16 被引用数 (Scopus)

抄録

We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The V_th rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

本文言語	English
ページ（範囲）	1165-1171
ページ数	7
ジャーナル	IEEE Transactions on Electron Devices
巻	52
号	6
DOI	https://doi.org/10.1109/TED.2005.848081
出版ステータス	Published - 2005 6月
外部発表	はい

ASJC Scopus subject areas

電子工学および電気工学
物理学および天文学（その他）

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10.1109/TED.2005.848081

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引用スタイル

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title = "Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs",

abstract = "We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The Vth rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.",

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author = "Akio Shima and Hiroshi Ashihara and Atsushi Hiraiwa and Toshiyuki Mine and Yasushi Goto",

year = "2005",

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doi = "10.1109/TED.2005.848081",

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AU - Shima, Akio

AU - Ashihara, Hiroshi

AU - Hiraiwa, Atsushi

AU - Mine, Toshiyuki

AU - Goto, Yasushi

PY - 2005/6

Y1 - 2005/6

N2 - We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The Vth rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

AB - We have developed a novel laser thermal process that dramatically enhances laser exposure windows by controlling the heating process in a self-limiting way. Key technology is realized by introducing a new process combination of preamorphization implantation and a heat absorber with a phase switch layer, and by optimizing them. The Vth rolloffs of MOSFETs formed by this method were remarkably improved compared to those by rapid thermal annealing when offset-spacer and halo-implantation processes were not applied. Its effectiveness was also verified in 50-nm gate complementary metal-oxide semiconductor devices for the first time by confirming that the drain current increased with laser fluence beyond the conventional exposure limit.

KW - Amorphous materials

KW - Complementary metal-oxide semiconductor (CMOS) integrated circuits

KW - Laser annealing

KW - Preamorphization implantation

KW - Rapid thermal annealed (RTA)

KW - Ultrashallow junction

KW - YAG lasers

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JO - IEEE Transactions on Electron Devices

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Ultrashallow junction formation by self-limiting LTP and its application to sub-65-nm node MOSFETs

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