@article{82980b3995ed4f4889d00a58fb53beec,
title = "Ultraviolet-emitting ZnO thick layer grown by thermal oxidation with gallium",
abstract = "The ZnO layer with thickness of 1.6 μm in ZnO/ZnGa2O4 composite structure was grown by the thermal oxidation of ZnS substrate with gallium. The optical property of the ZnO thick layer was investigated by time-resolved photoluminescence. A single UV emission around 375 nm with short lifetime was observed at room temperature while the visible emission was absolutely quenched. The UV emission band was composed of the neutral donor bound exciton (D0X) and donor-acceptor pair (DAP) emission peaks with large full-width at half-maximums (FWHMs) at 3.367 and 3.318 eV, respectively, at 10 K. However, the intensity of the D0X emission was stronger than that of the DAP emission at measuring temperatures of 10–300 K.",
keywords = "ZnO layer, gallium, photoluminescence, thermal oxidation, ultraviolet",
author = "Qing Yang and Zhou, {Xiao Hong} and Takao Nukui and Yu Saeki and Sotaro Izumi and Atsushi Tackeuchi and Hirokazu Tatsuoka and Liang, {Shu Hua}",
note = "Funding Information: This work was supported by the National Natural Science Foundation of China (Grant No. 51202191), Natural Science Basic Research Plan in Shaanxi Province of China (Grant No. 2012JQ6002), and Scientific Research Program Funded by Shaanxi Provincial Education Department of China (Grant No. 12JK0427). The authors would like to thank T. Aritake, M. Asakawa and M. Uemura of Waseda University for their assistance with data analysis. Publisher Copyright: {\textcopyright} 2014, Science China Press and Springer-Verlag Berlin Heidelberg.",
year = "2014",
month = dec,
day = "11",
doi = "10.1007/s11431-014-5714-y",
language = "English",
volume = "57",
pages = "2500--2503",
journal = "Science China Technological Sciences",
issn = "1674-7321",
publisher = "Science China Press",
number = "12",
}