Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

O. P. Agnihotri; Ravinder Pal; Keedong Yang; Soo Ho Bae; Sang Jun Lee; Min Young Lee; Woo Seok Choi; Jong Hwa Choi; Chul Hee; [No Value] Lee; Isamu Kato

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg_0.8Cd_0.2Te in hydrogen environment

O. P. Agnihotri^*, Ravinder Pal, Keedong Yang, Soo Ho Bae, Sang Jun Lee, Min Young Lee, Woo Seok Choi, Jong Hwa Choi, Chul Hee, [No Value] Lee, Isamu Kato

^*この研究の対応する著者

早稲田大学

研究成果: Article › 査読

2 被引用数 (Scopus)

抄録

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg_0.8Cd_0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg_0.8Cd_0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg_0.8Cd_0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg_0.8Cd_0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

本文言語	English
ページ（範囲）	4500-4502
ページ数	3
ジャーナル	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
巻	41
号	7 A
出版ステータス	Published - 2002 7月

ASJC Scopus subject areas

物理学および天文学（その他）

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引用スタイル

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title = "Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment",

abstract = "Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.",

keywords = "CdTe/n-HgCd Te, n-HgCdTe, Surface and interface modifications",

author = "Agnihotri, {O. P.} and Ravinder Pal and Keedong Yang and Bae, {Soo Ho} and Lee, {Sang Jun} and Lee, {Min Young} and Choi, {Woo Seok} and Choi, {Jong Hwa} and Chul Hee and Lee, {[No Value]} and Isamu Kato",

year = "2002",

month = jul,

language = "English",

volume = "41",

pages = "4500--4502",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "7 A",

}

TY - JOUR

T1 - Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

AU - Agnihotri, O. P.

AU - Pal, Ravinder

AU - Yang, Keedong

AU - Bae, Soo Ho

AU - Lee, Sang Jun

AU - Lee, Min Young

AU - Choi, Woo Seok

AU - Choi, Jong Hwa

AU - Hee, Chul

AU - Lee, [No Value]

AU - Kato, Isamu

PY - 2002/7

Y1 - 2002/7

N2 - Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

AB - Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te (MCT) and metal insulator semiconductor (MIS) structures fabricated from CdTe/n-Hg0.8Cd0.2Te have been investigated in a hydrogen environment. The shift of the absorption edge towards the short wavelength side and the enhancement of the IR transmission in n-Hg0.8Cd0.2Te are thought to be due to the reduction in the density of gap states due to residual impurities or defects. A pre-CdTe deposition surface treatment prevents the surface inversion of n-MCT during CdTe deposition and MIS devices after UV photon excitation show a considerable lowering of the interface charges. X-ray photoelectron spectroscopy profiles of annealed CdTe/n-Hg0.8Cd0.2Te show evidence of interface grading which accounts for the stability of CdTe passivation.

KW - CdTe/n-HgCd Te

KW - n-HgCdTe

KW - Surface and interface modifications

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UR - http://www.scopus.com/inward/citedby.url?scp=0036656342&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036656342

SN - 0021-4922

VL - 41

SP - 4500

EP - 4502

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

IS - 7 A

ER -

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg0.8Cd0.2Te in hydrogen environment

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ASJC Scopus subject areas

他のファイルとリンク

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引用スタイル

Ultraviolet photon induced bulk, surface and interface modifications in n-Hg_0.8Cd_0.2Te in hydrogen environment