抄録
We have studied the electronic structure of BaV10O15 across the metal-insulator transition with V trimerization by means of hard-x-ray photoemission spectroscopy (HAXPES) and mean-field calculations. The V 2p HAXPES indicates V2.5+-V3+ charge fluctuation in the metallic phase, and V2+-V3+ charge order in the insulating phase. The V2.5+-V3+ charge fluctuation is consistent with the mean-field solution where a V 3d a1g electron is shared by two V sites with face-sharing VO6 octahedra. The valence-band HAXPES of the metallic phase exhibits pseudogap opening at the Fermi level associated with the charge fluctuation, and a band gap ∼200 meV is established in the insulating phase due to the switching of charge correlation.
本文言語 | English |
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論文番号 | 075151 |
ジャーナル | Physical Review B |
巻 | 95 |
号 | 7 |
DOI | |
出版ステータス | Published - 2017 2月 27 |
ASJC Scopus subject areas
- 電子材料、光学材料、および磁性材料
- 凝縮系物理学