UV nanoimprint lithography and its application for nanodevices

Makoto Fukuhara; Hiroshi Ono; Tamano Hirasawa; Makoto Otaguchi; Nobuji Sakai; Jun Mizuno; Shuichi Shoji

doi:10.2494/photopolymer.20.549

UV nanoimprint lithography and its application for nanodevices

Makoto Fukuhara^*, Hiroshi Ono, Tamano Hirasawa, Makoto Otaguchi, Nobuji Sakai, Jun Mizuno, Shuichi Shoji

^*この研究の対応する著者

研究成果: Article › 査読

12 被引用数 (Scopus)

抄録

Nanostructure fabrication process using ultraviolet nanoimprint lithography (UV-NIL) and electrodeposition were proposed. This method shows remarkable advantages in high throughput production and fabrication cost. For this process, the newly resin which endures wet process was developed. Co dot arrays of 220nm were fabricated by electrodeposition after UV-NIL. GaN structure of 300nm was also realized using Ni as an etching mask fabricated by proposed process.

本文言語	English
ページ（範囲）	549-554
ページ数	6
ジャーナル	Journal of Photopolymer Science and Technology
巻	20
号	4
DOI	https://doi.org/10.2494/photopolymer.20.549
出版ステータス	Published - 2007

ASJC Scopus subject areas

ポリマーおよびプラスチック
有機化学
材料化学

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AU - Ono, Hiroshi

AU - Hirasawa, Tamano

AU - Otaguchi, Makoto

AU - Sakai, Nobuji

AU - Mizuno, Jun

AU - Shoji, Shuichi

PY - 2007

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AB - Nanostructure fabrication process using ultraviolet nanoimprint lithography (UV-NIL) and electrodeposition were proposed. This method shows remarkable advantages in high throughput production and fabrication cost. For this process, the newly resin which endures wet process was developed. Co dot arrays of 220nm were fabricated by electrodeposition after UV-NIL. GaN structure of 300nm was also realized using Ni as an etching mask fabricated by proposed process.

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KW - LED

KW - Magnetic dot array

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UV nanoimprint lithography and its application for nanodevices

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