TY - JOUR
T1 - Valence-band parameters and hole mobility of Ge-Si alloys-theory
AU - Takeda, K.
AU - Taguchi, A.
AU - Sakata, M.
N1 - Funding Information:
The authors would like to thank A. Monnier, F. Schiith and Q. Huo for helpful discussions. This work was funded by the NSF Materials Reseach Laboratory program under contract number DMR-9123048. BFC gratefully acknowledges support from the NSF Young Investigator Program, the Camille and Henry Dreyfus Foundation, and the David and Lucile Packard Foundation. TB thanks the DAAD for a research scholarship.
PY - 1983
Y1 - 1983
N2 - Using the Lawaetz method the authors have estimated the k.p band parameters and determined the band structure near the valence-band edge of the Ge-Si alloy system. They have also obtained the coupling constants between holes and phonons by Wiley's method. Using these two kinds of parameters they have calculated the time for relaxation of holes due to the lattice scattering, where they have taken into account the nonpolar optical phonon, the impurity scattering due to ionised and neutral centres and also the alloy scattering. The intervalence-band interactions are shown to produce the complicated temperature dependence of the hole mobility.
AB - Using the Lawaetz method the authors have estimated the k.p band parameters and determined the band structure near the valence-band edge of the Ge-Si alloy system. They have also obtained the coupling constants between holes and phonons by Wiley's method. Using these two kinds of parameters they have calculated the time for relaxation of holes due to the lattice scattering, where they have taken into account the nonpolar optical phonon, the impurity scattering due to ionised and neutral centres and also the alloy scattering. The intervalence-band interactions are shown to produce the complicated temperature dependence of the hole mobility.
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U2 - 10.1088/0022-3719/16/12/013
DO - 10.1088/0022-3719/16/12/013
M3 - Article
AN - SCOPUS:0043060940
SN - 0022-3719
VL - 16
SP - 2237
EP - 2249
JO - Journal of Physics C: Solid State Physics
JF - Journal of Physics C: Solid State Physics
IS - 12
M1 - 013
ER -