Valence-band parameters and hole mobility of Ge-Si alloys-theory

Engineering & Materials Science

• Si-Ge alloys 100%
• Valence bands 98%
• Hole mobility 90%
• Phonons 57%
• Scattering 51%
• Band structure 25%
• Impurities 17%
• Relaxation 16%
• Temperature 7%

Chemical Compounds

• Hole Mobility 64%
• Valence Band 60%
• Optical Phonon 43%
• Alloy 38%
• Phonon 30%
• Electronic Band Structure 27%
• Time 9%

Physics & Astronomy

• hole mobility 62%
• valence 39%
• scattering 21%
• phonons 18%
• impurities 9%
• temperature dependence 8%
• interactions 5%