VIB-6 Hall Effect Analysis of Charge Transport in Silicon Dioxide-Silicon Nitride Double Layers

A. Hiraiwa, J. Yugami, S. Ihjima, T. Kusaka, Y. Ohji

研究成果: Article › 査読

本文言語	English
ページ（範囲）	2386
ページ数	1
ジャーナル	IEEE Transactions on Electron Devices
巻	34
号	11
DOI	https://doi.org/10.1109/T-ED.1987.23321
出版ステータス	Published - 1987
外部発表	はい

ASJC Scopus subject areas

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