TY - JOUR
T1 - Volatile and nonvolatile selective switching of a photo-assisted initialized atomic switch
AU - Hino, T.
AU - Hasegawa, T.
AU - Tanaka, H.
AU - Tsuruoka, T.
AU - Terabe, K.
AU - Ogawa, T.
AU - Aono, M.
PY - 2013/9/27
Y1 - 2013/9/27
N2 - A photo-assisted atomic switch, which has a photoconductive molecular layer in a gap of about 20 nm between an Ag2S electrode and a Pt electrode, is set to a conventional gap-type atomic switch operation mode by light irradiation with the application of a small bias that precipitates Ag atoms from an Ag2S electrode. After this initialization, the switch operates only with application of a bias. In this study, we also found that after the set-operation a photo-assisted initialized atomic switch shows different switching modes depending on the bias range, i.e., volatile switching when the applied bias is smaller than the threshold bias, and nonvolatile switching when the applied bias is larger than the threshold bias. These characteristics can be useful in reconfiguring a circuit such as in neural computing systems.
AB - A photo-assisted atomic switch, which has a photoconductive molecular layer in a gap of about 20 nm between an Ag2S electrode and a Pt electrode, is set to a conventional gap-type atomic switch operation mode by light irradiation with the application of a small bias that precipitates Ag atoms from an Ag2S electrode. After this initialization, the switch operates only with application of a bias. In this study, we also found that after the set-operation a photo-assisted initialized atomic switch shows different switching modes depending on the bias range, i.e., volatile switching when the applied bias is smaller than the threshold bias, and nonvolatile switching when the applied bias is larger than the threshold bias. These characteristics can be useful in reconfiguring a circuit such as in neural computing systems.
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U2 - 10.1088/0957-4484/24/38/384006
DO - 10.1088/0957-4484/24/38/384006
M3 - Article
C2 - 23999187
AN - SCOPUS:84883513122
SN - 0957-4484
VL - 24
JO - Nanotechnology
JF - Nanotechnology
IS - 38
M1 - 384006
ER -