TY - GEN
T1 - Vmin=0.4 v LSIs are the real with silicon-on-thin-buried-oxide (SOTB)-How is the application with 'Perpetuum-Mobile' micro-controller with SOTB?
AU - Sugii, N.
AU - Iwamatsu, T.
AU - Yamamoto, Y.
AU - Makiyama, H.
AU - Shinohara, H.
AU - Oda, H.
AU - Kamohara, S.
AU - Yamaguchi, Y.
AU - Ishibashi, K.
AU - Mizutani, T.
AU - Hiramoto, T.
PY - 2013
Y1 - 2013
N2 - Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the near-or sub-Vth operation is effective in reducing energy per operation of CMOS circuits, its slow operation speed can miss a chance to be used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ul-tralow-power (ULP) electronics because of its small variability and back-bias control. This paper describes our results on the ULV operation of SRAM and ring oscillator (RO) circuits and shows the operation speed is now sufficiently high for many ULP applications. The 'Perpetuum-Mobile' micro-controllers operating at ∼0.4 V are expected to be implemented in many applications such as the internet of things.
AB - Ultralow-voltage (ULV) CMOS will be a core building block of highly energy efficient electronics. Although the near-or sub-Vth operation is effective in reducing energy per operation of CMOS circuits, its slow operation speed can miss a chance to be used in many applications. The silicon-on-thin-buried-oxide (SOTB) CMOS is a strong candidate for the ul-tralow-power (ULP) electronics because of its small variability and back-bias control. This paper describes our results on the ULV operation of SRAM and ring oscillator (RO) circuits and shows the operation speed is now sufficiently high for many ULP applications. The 'Perpetuum-Mobile' micro-controllers operating at ∼0.4 V are expected to be implemented in many applications such as the internet of things.
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U2 - 10.1109/S3S.2013.6716576
DO - 10.1109/S3S.2013.6716576
M3 - Conference contribution
AN - SCOPUS:84897741518
SN - 9781479913602
T3 - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
BT - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
PB - IEEE Computer Society
T2 - 2013 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S 2013
Y2 - 7 October 2013 through 10 October 2013
ER -