VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter

Bo Ma; Hiroyuki Kuwae; Akiko Okada; Weixin Fu; Shuichi Shoji; Jun Mizuno

doi:10.1109/ICEP.2016.7486866

VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter

Bo Ma, Hiroyuki Kuwae, Akiko Okada, Weixin Fu, Shuichi Shoji, Jun Mizuno

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

We proposed a single crystal quartz direct bonding method utilizing amorphous SiO2 intermediated layers, which can improve heat resistance of the optical low pass filter (OLPF) by novel fabrication method. An amorphous SiO2 was deposited on the opposite sides of both infrared reflection and anti-reflection coated substrates to prepare the highly activated surfaces. The substrates were bonded at 200 °C after the vacuum ultraviolet (VUV) /O3 pre-treatment. The bonded sample with amorphous SiO2 layer shows 5 times higher tensile strength than that without amorphous SiO2 layer while it keeps nearly 100% of light transmittance. These results indicate that amorphous SiO2 layer could prepare activate surface even in low vacuum bonding condition. This single crystal bonding method will be useful for realizing high performance OLPFs.

本文言語	English
ホスト出版物のタイトル	2016 International Conference on Electronics Packaging, ICEP 2016
出版社	Institute of Electrical and Electronics Engineers Inc.
ページ	447-450
ページ数	4
ISBN（電子版）	9784904090176
DOI	https://doi.org/10.1109/ICEP.2016.7486866
出版ステータス	Published - 2016 6月 7
イベント	2016 International Conference on Electronics Packaging, ICEP 2016 - Hokkaido, Japan 継続期間: 2016 4月 20 → 2016 4月 22

出版物シリーズ

名前	2016 International Conference on Electronics Packaging, ICEP 2016

Other

Other	2016 International Conference on Electronics Packaging, ICEP 2016
国/地域	Japan
City	Hokkaido
Period	16/4/20 → 16/4/22

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
電子工学および電気工学
材料力学

文献へのアクセス

10.1109/ICEP.2016.7486866

他のファイルとリンク

フィンガープリント

「VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Ma, B., Kuwae, H., Okada, A., Fu, W., Shoji, S., & Mizuno, J. (2016). VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. In 2016 International Conference on Electronics Packaging, ICEP 2016 (pp. 447-450). 記事 7486866 (2016 International Conference on Electronics Packaging, ICEP 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICEP.2016.7486866

VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. / Ma, Bo; Kuwae, Hiroyuki; Okada, Akiko その他.
2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 447-450 7486866 (2016 International Conference on Electronics Packaging, ICEP 2016).

研究成果: Conference contribution

Ma, B, Kuwae, H, Okada, A, Fu, W, Shoji, S & Mizuno, J 2016, VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. in 2016 International Conference on Electronics Packaging, ICEP 2016., 7486866, 2016 International Conference on Electronics Packaging, ICEP 2016, Institute of Electrical and Electronics Engineers Inc., pp. 447-450, 2016 International Conference on Electronics Packaging, ICEP 2016, Hokkaido, Japan, 16/4/20. https://doi.org/10.1109/ICEP.2016.7486866

Ma B, Kuwae H, Okada A, Fu W, Shoji S, Mizuno J. VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. In 2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 447-450. 7486866. (2016 International Conference on Electronics Packaging, ICEP 2016). doi: 10.1109/ICEP.2016.7486866

Ma, Bo ; Kuwae, Hiroyuki ; Okada, Akiko その他. / VUV/O3 assisted single crystal quartz bonding with amorphous SiO2 intermedicate layer for manufacturing optical low pass filter. 2016 International Conference on Electronics Packaging, ICEP 2016. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 447-450 (2016 International Conference on Electronics Packaging, ICEP 2016).

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abstract = "We proposed a single crystal quartz direct bonding method utilizing amorphous SiO2 intermediated layers, which can improve heat resistance of the optical low pass filter (OLPF) by novel fabrication method. An amorphous SiO2 was deposited on the opposite sides of both infrared reflection and anti-reflection coated substrates to prepare the highly activated surfaces. The substrates were bonded at 200 °C after the vacuum ultraviolet (VUV) /O3 pre-treatment. The bonded sample with amorphous SiO2 layer shows 5 times higher tensile strength than that without amorphous SiO2 layer while it keeps nearly 100% of light transmittance. These results indicate that amorphous SiO2 layer could prepare activate surface even in low vacuum bonding condition. This single crystal bonding method will be useful for realizing high performance OLPFs.",

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author = "Bo Ma and Hiroyuki Kuwae and Akiko Okada and Weixin Fu and Shuichi Shoji and Jun Mizuno",

note = "Funding Information: We gratefully acknowledge Japan STEEL WORKS, Ltd. and FINE CRYSTAL Co., Ltd, for their provision of materials, discussion and assistance. This work was supported in part by the Japan Ministry of Education, Culture, Sports, Science and Technology (MEXT) and a Grant-in-Aid for Scientific Basic Research (S) (No. 23226010) and Scientific Basic Research (B) (No. 2528924) Publisher Copyright: {\textcopyright} 2016 The Japan Institute of Electronics Packaging.; 2016 International Conference on Electronics Packaging, ICEP 2016 ; Conference date: 20-04-2016 Through 22-04-2016",

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AU - Shoji, Shuichi

AU - Mizuno, Jun

N1 - Funding Information: We gratefully acknowledge Japan STEEL WORKS, Ltd. and FINE CRYSTAL Co., Ltd, for their provision of materials, discussion and assistance. This work was supported in part by the Japan Ministry of Education, Culture, Sports, Science and Technology (MEXT) and a Grant-in-Aid for Scientific Basic Research (S) (No. 23226010) and Scientific Basic Research (B) (No. 2528924) Publisher Copyright: © 2016 The Japan Institute of Electronics Packaging.

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N2 - We proposed a single crystal quartz direct bonding method utilizing amorphous SiO2 intermediated layers, which can improve heat resistance of the optical low pass filter (OLPF) by novel fabrication method. An amorphous SiO2 was deposited on the opposite sides of both infrared reflection and anti-reflection coated substrates to prepare the highly activated surfaces. The substrates were bonded at 200 °C after the vacuum ultraviolet (VUV) /O3 pre-treatment. The bonded sample with amorphous SiO2 layer shows 5 times higher tensile strength than that without amorphous SiO2 layer while it keeps nearly 100% of light transmittance. These results indicate that amorphous SiO2 layer could prepare activate surface even in low vacuum bonding condition. This single crystal bonding method will be useful for realizing high performance OLPFs.

AB - We proposed a single crystal quartz direct bonding method utilizing amorphous SiO2 intermediated layers, which can improve heat resistance of the optical low pass filter (OLPF) by novel fabrication method. An amorphous SiO2 was deposited on the opposite sides of both infrared reflection and anti-reflection coated substrates to prepare the highly activated surfaces. The substrates were bonded at 200 °C after the vacuum ultraviolet (VUV) /O3 pre-treatment. The bonded sample with amorphous SiO2 layer shows 5 times higher tensile strength than that without amorphous SiO2 layer while it keeps nearly 100% of light transmittance. These results indicate that amorphous SiO2 layer could prepare activate surface even in low vacuum bonding condition. This single crystal bonding method will be useful for realizing high performance OLPFs.

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KW - Optical low pass filter

KW - Single crystal quartz

KW - Vacuum ultraviolet

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