TY - GEN
T1 - Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method
AU - Mu, Fengwen
AU - Fujino, Masahisa
AU - Suga, Tadatomo
AU - Takahashi, Yoshikazu
AU - Nakazawa, Haruo
AU - Iguchi, Kenichi
PY - 2015/5/20
Y1 - 2015/5/20
N2 - SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.
AB - SiC-SiC and SiC-Si wafer bonding has been achieved by two different modified surface activated bonding (SAB) methods without any chemical-clean treatment and high temperature annealing. Bonding strength of SiC-SiC is even higher than 32MPa. Bonding strength of SiC-Si bonded pair is also higher than the bulk strength of Si. The bonded wafers were almost completely bonded without some voids or peripheral area, which should be caused by some partilces and wafer warpage. The interfaces of bonded SiC-SiC and SiC-Si have been analyzed by high-resolution transmission electron microscopy (HRTEM) to verify the bonding mechanism.
KW - bonding strength
KW - interface
KW - SiC
KW - surface activated bonding
KW - wafer bonding
UR - http://www.scopus.com/inward/record.url?scp=84936159537&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84936159537&partnerID=8YFLogxK
U2 - 10.1109/ICEP-IAAC.2015.7111073
DO - 10.1109/ICEP-IAAC.2015.7111073
M3 - Conference contribution
AN - SCOPUS:84936159537
T3 - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
SP - 542
EP - 545
BT - ICEP-IAAC 2015 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference, ICEP-IAAC 2015
Y2 - 14 April 2015 through 17 April 2015
ER -