@inproceedings{f238538ce8e2458e9703aaefaf8ca94d,
title = "Wavelength tunability of highly stacked quantum dot laser fabricated by a strain compensation technique",
abstract = "We fabricated laser diodes containing highly stacked InAs quantum dots using the strain compensation technique, which showed laser emissions from 1.47 to 1.7 μm above the threshold current in pulsed mode.",
keywords = "Molecular beam epitaxy, Quantum dot, Semiconductor laser, Strain compensation",
author = "Kouichi Akahane and Naokatsu Yamamoto and Tetsuya Kawanishi",
year = "2010",
month = dec,
day = "1",
doi = "10.1109/ISLC.2010.5642763",
language = "English",
isbn = "9781424456833",
series = "Conference Digest - IEEE International Semiconductor Laser Conference",
pages = "37--38",
booktitle = "2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010",
note = "2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 ; Conference date: 26-09-2010 Through 30-09-2010",
}