TY - GEN
T1 - Wide temperature (10K-700K) and high voltage (∼1000V) operation of C-H diamond MOSFETs for power electronics application
AU - Kawarada, H.
AU - Yamada, T.
AU - Xu, D.
AU - Tsuboi, H.
AU - Saito, T.
AU - Hiraiwa, A.
N1 - Publisher Copyright:
© 2014 IEEE.
PY - 2015/2/20
Y1 - 2015/2/20
N2 - By forming a highly stable Al2O3 gate oxide on a C-H bonded channel of diamond, high-temperature and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From -263°C (10K) to 400°C (673K), the variation of maximum drain-current is within 50% at a given gate bias. The maximum breakdown voltage (VB,max) of the MOSFET without a field plate is 996V at a gate-drain distance (LGD) of 9μm. We fabricated some MOSFETs satisfying VB,max/LGD > 200V/μm (2MV/cm). This value is superior to those of lateral SiC or GaN FETs.
AB - By forming a highly stable Al2O3 gate oxide on a C-H bonded channel of diamond, high-temperature and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From -263°C (10K) to 400°C (673K), the variation of maximum drain-current is within 50% at a given gate bias. The maximum breakdown voltage (VB,max) of the MOSFET without a field plate is 996V at a gate-drain distance (LGD) of 9μm. We fabricated some MOSFETs satisfying VB,max/LGD > 200V/μm (2MV/cm). This value is superior to those of lateral SiC or GaN FETs.
UR - http://www.scopus.com/inward/record.url?scp=84938222401&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84938222401&partnerID=8YFLogxK
U2 - 10.1109/IEDM.2014.7047030
DO - 10.1109/IEDM.2014.7047030
M3 - Conference contribution
AN - SCOPUS:84938222401
T3 - Technical Digest - International Electron Devices Meeting, IEDM
SP - 11.2.1-11.2.4
BT - 2014 IEEE International Electron Devices Meeting, IEDM 2014
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2014 60th IEEE International Electron Devices Meeting, IEDM 2014
Y2 - 15 December 2014 through 17 December 2014
ER -