TY - GEN
T1 - Wideband CMOS decoupling power line for millimeter-wave applications
AU - Amakawa, S.
AU - Goda, R.
AU - Katayama, K.
AU - Takano, K.
AU - Yoshida, T.
AU - Fujishima, M.
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/24
Y1 - 2015/7/24
N2 - A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 ω in 20 GHz-170GHz and below 2 ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.
AB - A CMOS decoupling power line intended for use in millimeter-wave circuits is fabricated and characterized up to 325 GHz. It is designed to have a low dc resistance and an extremely low high-frequency characteristic impedance. The input impedance of a 0.3-mm-long line is shown to stay roughly below 1 ω in 20 GHz-170GHz and below 2 ω in 220 GHz-325 GHz, irrespective of whether the far end of the line is open- or short-ended, which clearly demonstrates its extremely wideband decoupling capability.
KW - bypass capacitor
KW - characteristic impedance
KW - power integrity
KW - radio-frequency interference
KW - transmission line
UR - http://www.scopus.com/inward/record.url?scp=84946016822&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84946016822&partnerID=8YFLogxK
U2 - 10.1109/MWSYM.2015.7167043
DO - 10.1109/MWSYM.2015.7167043
M3 - Conference contribution
AN - SCOPUS:84946016822
T3 - 2015 IEEE MTT-S International Microwave Symposium, IMS 2015
BT - 2015 IEEE MTT-S International Microwave Symposium, IMS 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - IEEE MTT-S International Microwave Symposium, IMS 2015
Y2 - 17 May 2015 through 22 May 2015
ER -