Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability

Yasumasa Tsukamoto; Koji Nii; Susumu Imaoka; Yuji Oda; Shigeki Ohbayashi; Tomoaki Yoshizawa; Hiroshi Makino; Koichiro Ishibashi; Hirofumi Shinohara

doi:10.1109/ICCAD.2005.1560101

Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability

Yasumasa Tsukamoto^*, Koji Nii, Susumu Imaoka, Yuji Oda, Shigeki Ohbayashi, Tomoaki Yoshizawa, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara

^*この研究の対応する著者

研究成果: Conference contribution

49 被引用数 (Scopus)

抄録

6T-SRAM cells in the sub-100 nm CMOS generation are now being exposed to a fatal risk that originates from large local Vth variability (σ _{V_Local}). To achieve high-yield SRAM arrays in presence of random σ_{V_Local} component, we propose worst-case analysis that determines the boundary of the stable Vth region for the SRAM read/write DC margin (Vth curve). Applying this to our original 65 nm SPICE model, we demonstrate typical behavior of the Vth curve and show new criteria for discussing SRAM array stability with Vth variability.

本文言語	English
ホスト出版物のタイトル	Proceedings of theICCAD-2005
ホスト出版物のサブタイトル	International Conference on Computer-Aided Design
ページ	398-405
ページ数	8
DOI	https://doi.org/10.1109/ICCAD.2005.1560101
出版ステータス	Published - 2005
外部発表	はい
イベント	ICCAD-2005: IEEE/ACM International Conference on Computer-Aided Design, 2005 - San Jose, CA, United States 継続期間: 2005 11月 6 → 2005 11月 10

出版物シリーズ

名前	IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD
巻	2005
ISSN（印刷版）	1092-3152

Other

Other	ICCAD-2005: IEEE/ACM International Conference on Computer-Aided Design, 2005
国/地域	United States
City	San Jose, CA
Period	05/11/6 → 05/11/10

ASJC Scopus subject areas

ソフトウェア
コンピュータサイエンスの応用
コンピュータグラフィックスおよびコンピュータ支援設計

文献へのアクセス

10.1109/ICCAD.2005.1560101

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引用スタイル

Tsukamoto, Y., Nii, K., Imaoka, S., Oda, Y., Ohbayashi, S., Yoshizawa, T., Makino, H., Ishibashi, K., & Shinohara, H. (2005). Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability. In Proceedings of theICCAD-2005: International Conference on Computer-Aided Design (pp. 398-405). 記事 1560101 (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD; Vol. 2005). https://doi.org/10.1109/ICCAD.2005.1560101

Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability. / Tsukamoto, Yasumasa; Nii, Koji; Imaoka, Susumu その他.
Proceedings of theICCAD-2005: International Conference on Computer-Aided Design. 2005. p. 398-405 1560101 (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD; Vol. 2005).

研究成果: Conference contribution

Tsukamoto, Y, Nii, K, Imaoka, S, Oda, Y, Ohbayashi, S, Yoshizawa, T, Makino, H, Ishibashi, K & Shinohara, H 2005, Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability. in Proceedings of theICCAD-2005: International Conference on Computer-Aided Design., 1560101, IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD, vol. 2005, pp. 398-405, ICCAD-2005: IEEE/ACM International Conference on Computer-Aided Design, 2005, San Jose, CA, United States, 05/11/6. https://doi.org/10.1109/ICCAD.2005.1560101

Tsukamoto Y, Nii K, Imaoka S, Oda Y, Ohbayashi S, Yoshizawa T その他. Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability. In Proceedings of theICCAD-2005: International Conference on Computer-Aided Design. 2005. p. 398-405. 1560101. (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD). doi: 10.1109/ICCAD.2005.1560101

Tsukamoto, Yasumasa ; Nii, Koji ; Imaoka, Susumu その他. / Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability. Proceedings of theICCAD-2005: International Conference on Computer-Aided Design. 2005. pp. 398-405 (IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD).

@inproceedings{b62c2a7fbe2d4e1388a87f5a6c6eb0c4,

title = "Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability",

abstract = "6T-SRAM cells in the sub-100 nm CMOS generation are now being exposed to a fatal risk that originates from large local Vth variability (σ V_Local). To achieve high-yield SRAM arrays in presence of random σV_Local component, we propose worst-case analysis that determines the boundary of the stable Vth region for the SRAM read/write DC margin (Vth curve). Applying this to our original 65 nm SPICE model, we demonstrate typical behavior of the Vth curve and show new criteria for discussing SRAM array stability with Vth variability.",

keywords = "Design form manufacturability (DFM), Local Vth variability, SRAM, Static noise margin",

author = "Yasumasa Tsukamoto and Koji Nii and Susumu Imaoka and Yuji Oda and Shigeki Ohbayashi and Tomoaki Yoshizawa and Hiroshi Makino and Koichiro Ishibashi and Hirofumi Shinohara",

year = "2005",

doi = "10.1109/ICCAD.2005.1560101",

language = "English",

isbn = "078039254X",

series = "IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD",

pages = "398--405",

booktitle = "Proceedings of theICCAD-2005",

note = "ICCAD-2005: IEEE/ACM International Conference on Computer-Aided Design, 2005 ; Conference date: 06-11-2005 Through 10-11-2005",

}

TY - GEN

T1 - Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability

AU - Tsukamoto, Yasumasa

AU - Nii, Koji

AU - Imaoka, Susumu

AU - Oda, Yuji

AU - Ohbayashi, Shigeki

AU - Yoshizawa, Tomoaki

AU - Makino, Hiroshi

AU - Ishibashi, Koichiro

AU - Shinohara, Hirofumi

PY - 2005

Y1 - 2005

N2 - 6T-SRAM cells in the sub-100 nm CMOS generation are now being exposed to a fatal risk that originates from large local Vth variability (σ V_Local). To achieve high-yield SRAM arrays in presence of random σV_Local component, we propose worst-case analysis that determines the boundary of the stable Vth region for the SRAM read/write DC margin (Vth curve). Applying this to our original 65 nm SPICE model, we demonstrate typical behavior of the Vth curve and show new criteria for discussing SRAM array stability with Vth variability.

AB - 6T-SRAM cells in the sub-100 nm CMOS generation are now being exposed to a fatal risk that originates from large local Vth variability (σ V_Local). To achieve high-yield SRAM arrays in presence of random σV_Local component, we propose worst-case analysis that determines the boundary of the stable Vth region for the SRAM read/write DC margin (Vth curve). Applying this to our original 65 nm SPICE model, we demonstrate typical behavior of the Vth curve and show new criteria for discussing SRAM array stability with Vth variability.

KW - Design form manufacturability (DFM)

KW - Local Vth variability

KW - SRAM

KW - Static noise margin

UR - http://www.scopus.com/inward/record.url?scp=33750831908&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750831908&partnerID=8YFLogxK

U2 - 10.1109/ICCAD.2005.1560101

DO - 10.1109/ICCAD.2005.1560101

M3 - Conference contribution

AN - SCOPUS:33750831908

SN - 078039254X

SN - 9780780392540

T3 - IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

SP - 398

EP - 405

BT - Proceedings of theICCAD-2005

T2 - ICCAD-2005: IEEE/ACM International Conference on Computer-Aided Design, 2005

Y2 - 6 November 2005 through 10 November 2005

ER -

Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability

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