Initial oxide formation on a Si(lll) surface with high-purity ozone (more than 80% ozone concentration at the sample position) is investigated by X-ray photoelectron spectroscopy (XPS). The suboxide formed by oxidation is characterized from Si2P spectra. From the comparison of the suboxides formed with ozone and oxygen exposures, it is clear that ozone forms less suboxide than oxygen. Ozone oxidizes a monohydride Si surface, which oxygen does not oxidize appreciably.
|ジャーナル||Japanese journal of applied physics|
|出版ステータス||Published - 1995 12月|
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