The electro-optical effect of ZnTe is recently highlighted, and various device structures utilizing ZnTe are explored. ZnTe substrates are recently commercially available, and high quality homoepitaxial layers can be grown. On the other hand, the cost of the substrate could be a concern for the practical device application. In this study, Si and Al 2O 3 substrates were used since they are widely used for many kinds of device applications. The lattice mismatch between those substrate materials and ZnTe is above 10% and those mismatch strain should be carefully considered. ZnTe layers were nucleated on chemically treated substrate surfaces. (111), (110), (211) oriented Si substrates and (0001), (11-20), and (10-10) planes of Al 2O 3 were used. By taking the pole figure data and studying the crystal symmetry of the domain, detail information associated with the formation of domains in the layer was discussed. The pole figure analysis revealed that several kinds of (110) oriented ZnTe domains rotated 60 degrees each other were formed on (110) oriented Si surface. On the other hand, preferentially oriented single domain of (111) was confirmed for the layer grown on the (0001) plane of Al 2O 3. ZnTe layers grown on (10-10) plane Al 2O 3exhibited a unique domain formation. Pole figure data combined with the conventional theta-2theta measurement indicated that (211) oriented plane of ZnTe was a dominant domain formed on the (10-10) plane Al 2O 3. These crystallographic features would be related to the interface valency as well as the interfacial bond structure. X-ray pole figure method was a useful and powerful method to study the domain formation of the severely lattice mismatched structures.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2012 8月|
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