Znse: Mn dc-electroluminescent cells using di-n-cyclopentadienyl manganese as a new manganese source fabricated by plasma-assisted mocvd

Naoki Mino; Masakazu Kobayashmi; Makoto Konagai; Kiyoshi Takahashi

doi:10.1143/JJAP.24.L383

Znse: Mn dc-electroluminescent cells using di-n-cyclopentadienyl manganese as a new manganese source fabricated by plasma-assisted mocvd

Naoki Mino, Masakazu Kobayashmi, Makoto Konagai, Kiyoshi Takahashi

研究成果: Article › 査読

8 被引用数 (Scopus)

抄録

Al/ZnSe: Mn/ITO (indium tin oxide) dc-electroluminescent cells were fabricated by plasma-assisted organometallic chemical vapor deposition. As a new manganese source, di-lr-cyclopentadienyl manganese [(C, H), Mn] was successfully used for the first time.

本文言語	English
ページ（範囲）	383-385
ページ数	3
ジャーナル	Japanese journal of applied physics
巻	24
号	5 A
DOI	https://doi.org/10.1143/JJAP.24.L383
出版ステータス	Published - 1985 5月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

文献へのアクセス

10.1143/JJAP.24.L383

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引用スタイル

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abstract = "Al/ZnSe: Mn/ITO (indium tin oxide) dc-electroluminescent cells were fabricated by plasma-assisted organometallic chemical vapor deposition. As a new manganese source, di-lr-cyclopentadienyl manganese [(C, H), Mn] was successfully used for the first time.",

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