ZnTe layers on R - and S -plane sapphire substrates

Taizo Nakasu; Shota Hattori; Takeru Kizu; Wei Che Sun; Fukino Kazami; Yuki Hashimoto; Masakazu Kobayashi; Toshiaki Asahi

doi:10.1002/pssc.201510265

ZnTe layers on R - and S -plane sapphire substrates

Taizo Nakasu^*, Shota Hattori, Takeru Kizu, Wei Che Sun, Fukino Kazami, Yuki Hashimoto, Masakazu Kobayashi, Toshiaki Asahi

^*この研究の対応する著者

先進理工学部

研究成果: Article › 査読

2 被引用数 (Scopus)

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ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed. (

本文言語	English
ページ（範囲）	435-438
ページ数	4
ジャーナル	Physica Status Solidi (C) Current Topics in Solid State Physics
巻	13
号	7-9
DOI	https://doi.org/10.1002/pssc.201510265
出版ステータス	Published - 2016 7月 1

ASJC Scopus subject areas

凝縮系物理学

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10.1002/pssc.201510265

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abstract = "ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed. (",

keywords = "ZnTe, heteroepitaxy, molecular beam epitaxy, sapphire",

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T1 - ZnTe layers on R - and S -plane sapphire substrates

AU - Nakasu, Taizo

AU - Hattori, Shota

AU - Kizu, Takeru

AU - Sun, Wei Che

AU - Kazami, Fukino

AU - Hashimoto, Yuki

AU - Kobayashi, Masakazu

AU - Asahi, Toshiaki

PY - 2016/7/1

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N2 - ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed. (

AB - ZnTe epilayers were grown on R -plane (Formula presented.) and S -plane (Formula presented.) sapphire substrates by molecular beam epitaxy, and the crystal orientation and the optical property were studied. The crystal orientation of ZnTe layers on sapphire substrates was studied using X-ray diffraction pole figure measurements. It was confirmed that (111)-oriented domains were formed on the R -plane as well as on the S -plane substrate. Layers grown on R -plane exhibited higher film quality. From the low-temperature photoluminescence, emissions caused by ZnTe exciton were observed. (

KW - ZnTe

KW - heteroepitaxy

KW - molecular beam epitaxy

KW - sapphire

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ZnTe layers on R - and S -plane sapphire substrates

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